super323 ? ? sot323 pnp silicon power (switching) transistor issue 1 - september 1998 features * 500mw power dissipation *i c cont 1.5a * 3a peak pulse current * excellent h fe characteristics up to 3a (pulsed) * extremely low saturation voltage * extremely low equivalent on resistance; r ce(sat) applications * negative boost functions in dc-dc converters * supply line switching in mobile phones and pagers * motor drivers in camcorders and mini disk players device type complement partmarking r ce(sat) ZUMT717 zumt617 t71 150m w at 1.25a absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -12 v collector-emitter voltage v ceo -12 v emitter-base voltage v ebo -5 v peak pulse current** i cm -3 a continuous collector current i c -1.25 a base current i b -200 ma power dissipation at t amb =25c* p tot 385 ? 500 ? mw operating and storage temperature range t j :t stg -55 to +150 c ? recommended p tot calculated using fr4 measuring 10 x 8 x 0.6mm (still air). ? maximum power dissipation is calculated assuming that the device is mounted on fr4 size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers. ZUMT717
electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -12 v i c = -100 m a collector-emitter breakdown voltage v (br)ceo -12 v i c = -10ma* emitter-base breakdown voltage v (br)ebo -5 v i e = -100 m a collector cut-off current i cbo -10 na v cb =-10v emitter cut-off current i ebo -10 na v eb =-4v collector emitter cut-off current i ces -10 na v ces =-10v collector-emitter saturation voltage v ce(sat) -25 -55 -110 -160 -185 -40 -100 -175 -215 -240 mv mv mv mv mv i c = -0.1a, i b = -10ma* i c = -0.25a, i b =-10 ma* i c = -0.5a, i b =-10 ma* i c = -1a, i b = -50ma* i c = -1.25a, i b = -100ma* base-emitter saturation voltage v be(sat) -990 -1100 mv i c = -1.25a, i b = -100ma* base-emitter turn-on voltage v be(on) -850 -1000 mv i c = -1.25a, v ce = 2v* static forward current transfer ratio h fe 300 300 200 125 75 30 490 450 340 250 140 80 i c = -10ma, v ce =-2v* i c = -0.1a, v ce = -2v* i c = -0.5a, v ce = -2v* i c = -1.25a, v ce =-2v* i c = -2a, v ce = -2v* i c = -3a, v ce = -2v* transition frequency f t 220 mhz i c = -50ma, v ce =-10 v f= 100mhz output capacitance c obo 15 pf v cb = -10v, f=1mhz turn-on time t (on) 50 ns v cc = -10v, i c =-1a i b1 =i b2 =-100ma turn-off time t (off) 135 ns *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% ZUMT717
ZUMT717 typical characteristics 1m 1m 1m 100m 100 1m 1m i c - collector current (a) v ce(sat) v i c 0 v ce(sat) - (v) ic/ib=10 ic/ib=50 ic/ib=100 +25c -55c h fe - typical gain +100c 0 i c - collector current (a) h fe v i c v be(on) - (v) 0 i c - collector current (a) v be(on) v i c +100c +150c v ce(sat) - (v) +25c 0 i c - collector current (a) v ce(sat) v i c +100c +150c v be(sat) - (v) +25c 0 i c - collector current (a) v be(sat) v i c 1s 100ms i c - collector current (a) 10 dc 10m v ce - collector emitter voltage (v) safe operating area 10ms 1ms 100s +25c -55c ic/ib=50 vce=2v -55c ic/ib=50 +25c +150c +100c -55c 10m 100m 1 10 0.1 0.2 0.3 0.4 0.1 0.2 0.3 0.4 10m 100m 1 10 200 400 600 800 10m 100m 1 10 10m 100m 1 10 10m 100m 1 10 0.6 0.2 0.4 0.8 1.0 0.2 0.4 0.6 0.8 1.0 110 100m 1
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